2SB817 - Sanyo Semicon Device

2SB817 PNP Epitaxial Planar Silicon Transistors

in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector .

Features

· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD1047] The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter.