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·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switch.
150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -3mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -2V hFE-2 DC Current Gain IC= -5A ; VCE= -2V hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 2SB601 .
2SB601 - NEC
of circuits, software and other related information in this document are provided for illustrative purposes in semicond.
2SB601 - SavantIC
·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequenc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB600 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB600 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB604 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB605 |
NEC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB608 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB609 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB609 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 9 | 2SB612 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB613 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB616 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB616 |
SavantIC |
SILICON POWER TRANSISTOR |
|