2SB612 - INCHANGE

2SB612 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommended for 80~100W audio amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

Features

wn Voltage IC= -30mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE= -5V  hFE-1 Classifications A B C 35-70 60-120 100-200 2SB612 MIN TYP. MAX UNIT -140 V -6 V -1.5 V -1.5 V -10 μA 35 200 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T.