2SB611 - INCHANGE

2SB611 Silicon PNP Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.

Features

Sustaining Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current VCE= -110V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE -1 DC Current Gain IC= -1A; VCE= -5V hFE -2 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V MIN TYP. MAX UNIT -110 V -8 .