Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SB601 |
Click to view a larger image
| Part Number | 2SB601 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum L... |
| Features |
150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A ,IB= -3mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A ; VCE= -2V
hFE-2
DC Current Gain
IC= -5A ; VCE= -2V
hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 2SB601 ... |
| Document |
 2SB601 Data Sheet
PDF 214.99KB |
| Distributor | Stock | Price | Buy |
|---|
