2SB608 - INCHANGE

2SB608 PNP Transistor

·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

Features

tter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC=- 50mA; VCE=-4V ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -50mA ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz MIN TYP. MAX UNIT -180 V -6 V -1.0 V -1.0 V -100 μA -10 μA 60 320 40 pF Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time wi.