·With TO-3PN package ·Complement to type 2SD586 APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-bas.
Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-1A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 50 11 140 MIN -100 -100 -5 TYP. 2SB616 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 fT COB MAX UNIT V V V -1.5 -1.5 -0.1 -0.1 V V mA mA MHz pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB616 Fig.2 outline dimensi.
·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor | |
2 | 2SB612 |
INCHANGE |
PNP Transistor | |
3 | 2SB613 |
INCHANGE |
PNP Transistor | |
4 | 2SB617 |
ETC |
Silicon Triple Diffused Transistor | |
5 | 2SB617A |
ETC |
Silicon Triple Diffused Transistor | |
6 | 2SB600 |
INCHANGE |
PNP Transistor | |
7 | 2SB600 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB601 |
INCHANGE |
PNP Transistor | |
9 | 2SB601 |
NEC |
PNP Transistor | |
10 | 2SB601 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SB604 |
INCHANGE |
PNP Transistor | |
12 | 2SB605 |
NEC |
PNP SILICON TRANSISTOR |