2SB1392 Silicon PNP Transistor Datasheet

2SB1392 Silicon PNP Transistor

2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM ADE-208-872 (Z) 1st. Edition September 2000 123 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature S.

Features

— — voltage Base to emitter saturation VBE(sat) — — voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit — V — V — V
  –10 µA
  –10 200 —
  –1.0 V
  –1.0 V
  –1.2 V Test conditions IC =
  –10 µA, IE = 0 IC =
  –50 mA, RBE = ∞ IE =
  –10 µA, IC = 0 VCB =
  –50 V, IE = 0 VCE =
  –50 V, RBE = ∞ VCE =
  –4 V, IC =
  –1 A
*1 VCE =
  –4 V, IC =
  –0.1 A
*1 VCE =
  –4 V, IC =
  –1 A
*1 IC =
  –2.0 A, IB =
  –0.2 A
*1 IC =
  –2.0 A, IB =
  –0.2 A
*1 B 60 to 120 C 100 to 200 Collector power dissipation Pc (W) Collector Current IC (A) Maximum Collector Dissipation Curve 30 20 10 0 50 100 15.

The same part from a different manufacturer

2SB1392 - INCHANGE

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for r.

2SB1392 - Hitachi Semiconductor

2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Colle.

2SB1392 - SavantIC

·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency po.

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2SB1392 - Renesas