2SB139100MA - Silan Microelectronics

2SB139100MA LOW IR SCHOTTKY BARRIER DIODE

Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capa.

Features

Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 3 80 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=3A VR=100V Min. 100 --Max. -0.85 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ La fabricated in silicon epitaxial planar technology; .