·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage.
n voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE=: IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-4A ;IB=-8mA IC=-8A ;IB=-80mA IC=-4A ;IB=-8mA IC=-8A ;IB=-80mA VCB=-100V; IE=0 VCE=-100V; RBE=: IC=-4A ; VCE=-3V 1000 MIN -120 -120 -7 -1.5 -3.0 -2.0 -3.5 -10 -10 20000 TYP. MAX UNIT V V V V V V V µA µA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE 2 SavantIC Semiconductor www.Data.
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -.
2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1390 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1390 |
INCHANGE |
PNP Transistor | |
3 | 2SB1390 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB139040ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE | |
5 | 2SB139060ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE | |
6 | 2SB139100MA |
Silan Microelectronics |
LOW IR SCHOTTKY BARRIER DIODE | |
7 | 2SB1392 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
8 | 2SB1392 |
INCHANGE |
PNP Transistor | |
9 | 2SB1392 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB1392 |
Renesas |
Silicon PNP Transistor | |
11 | 2SB1393 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
12 | 2SB1393 |
SavantIC |
SILICON POWER TRANSISTOR |