Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Chip Topography and Dimensions La: Chip Siz.
R VF IR Test Conditions IR=0.5mA IF=3A VR=60V Min. 60 --Max. -0.75 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ La fabricated in silicon epitaxial planar technology; .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1390 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1390 |
INCHANGE |
PNP Transistor | |
3 | 2SB1390 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB139040ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE | |
5 | 2SB1391 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
6 | 2SB1391 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1391 |
INCHANGE |
PNP Transistor | |
8 | 2SB139100MA |
Silan Microelectronics |
LOW IR SCHOTTKY BARRIER DIODE | |
9 | 2SB1392 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
10 | 2SB1392 |
INCHANGE |
PNP Transistor | |
11 | 2SB1392 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1392 |
Renesas |
Silicon PNP Transistor |