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Ø Ø Ø Ø Ø Ø 2SB139040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Chip Topography and Dimensions La: Chip Siz.
R VF IR Test Conditions IR=0.5mA IF=3A VR=40V Min. 40 --Max. -0.55 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ La fabricated in silicon epitaxial planar technology; .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1390 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1390 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1390 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB139060ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE |
|
| 5 | 2SB1391 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 6 | 2SB1391 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1391 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB139100MA |
Silan Microelectronics |
LOW IR SCHOTTKY BARRIER DIODE |
|
| 9 | 2SB1392 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SB1392 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB1392 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1392 |
Renesas |
Silicon PNP Transistor |
|