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2SB1392 |
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| Part Number | 2SB1392 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low ... |
| Features |
e Breakdown Voltage
IC= -10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat)★ Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat)★ Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
VBE(on)★ Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
ICEO
Collector Cutoff Current
VCE= -50V; RBE= ∞
hFE-1★
DC Current Gain
IC= -1A; VCE= -4V
hFE-2★
DC Current Gain
★：Pulse test.
hFE-1 Classifications B C IC= -0.1A; VCE= -4V 60-120 100-200 2SB1392 MIN TYP. MAX UNIT -60 V -70 V -5 V -1.0 V -1.2 V ... |
| Document |
 2SB1392 Data Sheet
PDF 196.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1390 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1390 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1390 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB139040ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE |
|
| 5 | 2SB139060ML |
Silan Microelectronics |
SCHOTTKY BARRIER DIODE |
|