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·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitte.
tage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE== IE=-50mA, IC=0 IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA VCB=-120V, IE=0 VCE=-100V, RBE== IC=-3A ; VCE=-3V ID=-6A 1000 MIN -120 -7 2SB1106 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V µA µA 3.0 V 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transist.
2SB1106 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1101 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 6 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1102 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1103 |
Hitachi Semiconductor |
PNP Transistor |
|
| 9 | 2SB1103 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1103 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1105 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1105 |
INCHANGE |
PNP Transistor |
|