2SB1105 - INCHANGE

2SB1105 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

Features

Voltage IC= -25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -30mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ hFE DC Current Gain IC= -1.5A; VCE= -3V 2SB1105 MIN TYP. MAX UNIT -120 V -7 V -1.5 V -3.0 V -2.0 V -3.5 V -100 μA -10 μA 1000.