2SB1100 - Inchange Semiconductor

2SB1100 Silicon PNP Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS.

Features

=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -25mA ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10A ; VCE= -2V  hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 2SB1100 MIN TYP. MAX UNIT -1.5 V -2.0 V -10 μA -3 mA 1000 30000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif.