2SB1103 - Hitachi Semiconductor

2SB1103 PNP Transistor

2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Coll.

Features

IB =
  –8 mA
*1 I C =
  –8 A, IB =
  –80 mA
*1 I D = 8 A
*1 I C =
  –4 A, I B1 =
  –IB2 =
  –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current tarnsfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse Test. VD t on t stg tf 2 2SB1103 Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) iC(peak)
  –10 IC(max) Collector current IC (A)
  –3
  –1.0 .