2SB1106 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB1106

INCHANGE
2SB1106
2SB1106 2SB1106
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Part Number 2SB1106
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
Features BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -6mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -6A; IB= -60mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ hFE DC Current Gain IC= -3A; VCE= -3V VECF C-E Diode Forward Voltage IF= 6A Switching Times ton Turn-on Time tstg Storage Time IC= -3A, IB1= -IB2= -6mA tf Fall Time ...

Document Datasheet 2SB1106 Data Sheet
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