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·With TO-220 package ·Complement to type 2SD1602 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor | |
3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1101 |
INCHANGE |
PNP Transistor | |
5 | 2SB1103 |
Hitachi Semiconductor |
PNP Transistor | |
6 | 2SB1103 |
INCHANGE |
PNP Transistor | |
7 | 2SB1103 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB1105 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1105 |
INCHANGE |
PNP Transistor | |
10 | 2SB1106 |
INCHANGE |
PNP Transistor | |
11 | 2SB1106 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1108 |
Panasonic Semiconductor |
PNP Transistor |