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Transistors 2SA1952 / 2SA1906 / 2SA2006 High-speed Switching Transistor (−60V, −5A) 2SA1952 / 2SA1906 / 2SA2006 !Features 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103 / 2SC5525. !Absolute maximum ratings (Ta = 25°C) Parameter .
1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103 / 2SC5525. !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1952 2SA1906 2SA2006 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −100 −60 −5 −5 −10 1 10 1.5 25 2 25 150 −55 ∼ +150 Unit V V V A A(Pulse) W W(Tc=25°C) W W(Tc=25°C) W W(Tc=25°C) °C °C !Packaging speci.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2002 |
IDC |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | 2SA2004 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA2004 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SA2005 |
Rohm |
Transistors |
|
| 5 | 2SA2009 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 6 | 2SA201 |
ETC |
PNP transistor |
|
| 7 | 2SA2010 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 8 | 2SA2011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA2012 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SA2012 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2013 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SA2014 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|