2SA2012 PNP/NPN Epitaxial Planar Silicon Transistors Datasheet

2SA2012 PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2012/2SC5565] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation volta.

Features

· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting applied sets to be made small and slim.
· High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted .

The same part from a different manufacturer

2SA2012 - ON Semiconductor

Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applica.

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