Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching 15.0±0.5 I Features φ 3.2.
φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.0 150 −55 to +150 °C °C Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage temperature I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol IC.
·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA2002 |
IDC |
Silicon PNP Epitaxial Type Transistor | |
2 | 2SA2005 |
Rohm |
Transistors | |
3 | 2SA2006 |
ROHM |
High-speed Switching Transistor | |
4 | 2SA2009 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SA201 |
ETC |
PNP transistor | |
6 | 2SA2010 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SA2011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SA2012 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
9 | 2SA2012 |
ON Semiconductor |
Bipolar Transistor | |
10 | 2SA2013 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
11 | 2SA2014 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SA2015 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |