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Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Features • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SC5592 1 0.40+0.10 –0.05.
• Low collector to emitter saturation voltage VCE(sat) , large current capacitance
• High-speed switching
• Mini type 3-pin package, allowing downsizing and thinning of the equipment.
• Complementary pair with 2SC5592
1
0.40+0.10
–0.05 3
0.16+0.10
–0.06
1.50+0.25
–0.05
2.8+0.2
–0.3
2
(0.95) (0.95) 1.9±0.1 2.90+0.20
–0.05 10°
1.1+0.2
–0.1
(0.65)
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA201 |
ETC |
PNP transistor |
|
| 2 | 2SA2011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SA2012 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA2012 |
ON Semiconductor |
Bipolar Transistor |
|
| 5 | 2SA2013 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA2014 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA2015 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA2016 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA2016 |
UTC |
PNP TRANSISTOR |
|
| 10 | 2SA2016 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2017 |
ROHM |
Power Transistor |
|
| 12 | 2SA2018 |
GME |
LOW FREQUENCY TRANSISTOR |
|