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Ordering number:ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2011/2SC5564] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation volta.
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to be made small and slim.
· High allowable power dissipation.
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA201 |
ETC |
PNP transistor |
|
| 2 | 2SA2010 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SA2012 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA2012 |
ON Semiconductor |
Bipolar Transistor |
|
| 5 | 2SA2013 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA2014 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SA2015 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA2016 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA2016 |
UTC |
PNP TRANSISTOR |
|
| 10 | 2SA2016 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2017 |
ROHM |
Power Transistor |
|
| 12 | 2SA2018 |
GME |
LOW FREQUENCY TRANSISTOR |
|