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RoHS 2SA1832 2SA1832 FEATURES Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage C.
Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO unless otherwise specified) Collector-emitter saturation voltage Transition frequency Collector o.
2SA1832 - Toshiba Semiconductor
Bipolar Transistors Silicon PNP Epitaxial Type 2SA1832 1. Applications • Low-Frequency Amplifiers 2. Features (1) AEC-Q1.
2SA1832 - JCST
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SA1832 TRANSISTOR (PNP) SO.
2SA1832 - GME
Plastic-Encapsulate Transistors FEATURES High voltage and high current. Excellent hFE linearity. High hFE. Comp.
2SA1832 - Secos
2SA1832 Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A su.
2SA1832 - WEITRON
2SA1832 PNP TRANSISTOR P b Lead(Pb)-Free FEATURES: * High voltage and high current * Excellent hFE linearity * Complemen.
2SA1832 - TOPSKY
Production specification Plastic-Encapsulate Transistors FEATURES z z z z z High voltage and high current Excellent hFE.
2SA1832 - Kexin
SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features High Vo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1831 |
Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors |
|
| 3 | 2SA1832-GR |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 4 | 2SA1832-Y |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 5 | 2SA1834 |
Rohm |
Low Vce(sat) Transistor |
|
| 6 | 2SA1836 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SA1837 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SA1837 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 9 | 2SA1837 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1837 |
JILIN SINO |
PNP Epitaxial Silicon Transistor |
|
| 11 | 2SA1837AF |
NELL SEMICONDUCTOR |
High Frequency PNP Power Transistor |
|
| 12 | 2SA1838 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|