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2SA1832 |
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| Part Number | 2SA1832 |
| Manufacturer | WEJ |
| Description | RoHS 2SA1832 2SA1832 FEATURES Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -... |
| Features |
Power dissipation PCM
SOT-523
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
: 0.1
W (Tamb=25℃)
Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO
unless otherwise specified)
Collector-emitter saturation voltage Transition frequency
Collector o... |
| Document |
 2SA1832 Data Sheet
PDF 141.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1831 |
Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors |
|
| 3 | 2SA1832 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1832 |
JCST |
PNP Transistor |
|
| 5 | 2SA1832 |
GME |
Plastic-Encapsulate Transistors |
|