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2SA1837 - Toshiba Semiconductor

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2SA1837 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base cur.

Features

EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.5 V ― ― −1.0 V ― 70 ― MHz ― 30 ― pF Marking A1837 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 Collector current IC (A) −1.0 −0.8 −0.6 −0.4 −0.2 0 0 IC
  – VCE −20 −10 −8 −6 −4 IB = −2 mA Common emitter Tc = 25°C −2 −4 −6 −8 Collector-emitter voltage VCE (V) −.

The same part from a different manufacturer

Datasheet 2SA1837 - UTC 2SA1837

, at any time and without notice. This document supersedes and replaces all information supplied prior to the publicatio.

Datasheet 2SA1837 - JILIN SINO 2SA1837

of Changes 201312B 4/4 .

Datasheet 2SA1837 - Inchange Semiconductor 2SA1837

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2S.

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