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Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta.
· High breakdown voltage (VCEO min=
–800V).
· Small Cob (Cob typ=1.6pF).
· High reliabirity (Adoption of HVP processes).
Package Dimensions
unit:mm 2010B
[2SA1831]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1832 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1832 |
JCST |
PNP Transistor |
|
| 4 | 2SA1832 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1832 |
Secos |
PNP Transistor |
|
| 6 | 2SA1832 |
WEITRON |
PNP TRANSISTOR |
|
| 7 | 2SA1832 |
WEJ |
PNP TRANSISTOR |
|
| 8 | 2SA1832 |
TOPSKY |
Plastic-Encapsulate Transistors |
|
| 9 | 2SA1832 |
Kexin |
Silicon PNP Transistor |
|
| 10 | 2SA1832-GR |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 11 | 2SA1832-Y |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 12 | 2SA1834 |
Rohm |
Low Vce(sat) Transistor |
|