2SA1832 |
Part Number | 2SA1832 |
Manufacturer | JCST |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SA1832 TRANSISTOR (PNP) SOT-523 FEATURES z High voltage and high current z Excellent hFE linearity z Comp... |
Features |
z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PD RθJA TJ, Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature
Value -50 -50 -5 -150 100 125
-55 to +125
Unit V V V mA
mW
℃/W ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
1. BASE 2. EMITTER 3. COLLECTOR
Parameter Collector-base breakdown voltage Collect... |
Document |
2SA1832 Data Sheet
PDF 354.63KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor | |
2 | 2SA1831 |
Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors | |
3 | 2SA1832 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1832 |
GME |
Plastic-Encapsulate Transistors | |
5 | 2SA1832 |
Secos |
PNP Transistor |