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The 2SA1836 is PNP silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltag.
1.6 ± 0.1 0.8 ± 0.1
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = −50 V
3 0 to 0.1 2 0.2 +0.1
–0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
−60 −50 −5.0 −100 −200 200 150
–55 to + 150
V V V mA mA mW °C °C
Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range
1: Emitter 2: Base 3: Collector
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1831 |
Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors |
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| 3 | 2SA1832 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1832 |
JCST |
PNP Transistor |
|
| 5 | 2SA1832 |
GME |
Plastic-Encapsulate Transistors |
|
| 6 | 2SA1832 |
Secos |
PNP Transistor |
|
| 7 | 2SA1832 |
WEITRON |
PNP TRANSISTOR |
|
| 8 | 2SA1832 |
WEJ |
PNP TRANSISTOR |
|
| 9 | 2SA1832 |
TOPSKY |
Plastic-Encapsulate Transistors |
|
| 10 | 2SA1832 |
Kexin |
Silicon PNP Transistor |
|
| 11 | 2SA1832-GR |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 12 | 2SA1832-Y |
MCC |
PNP Silicon Epitaxial Transistor |
|