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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SA1203 FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACT.
Power dissipation PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(B.
2SA1203 - GME
Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable.
2SA1203 - Jin Yu Semiconductor
2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES z Complementary to 2SC2883 z Small Flat Package z Audio Frequency.
2SA1203 - Toshiba Semiconductor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 2SA1203 Audio Frequency Amplifier Applications · .
2SA1203 - HOTTECH
Plastic-Encapsulate Transistors FEATURES • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.
2SA1203 - BLUE ROCKET ELECTRONICS
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features 3W ，， 2SC2883 。 Suitable for output .
2SA1203 - Kexin
SMD Type Transistors Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Ampl.
2SA1203 - SeCoS
Elektronische Bauelemente 2SA1203 -1.5 A , -30 V P P Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 6 | 2SA1201 |
UTC |
SILICON PNP EPITAXIAL TRANSISTOR |
|
| 7 | 2SA1201 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 8 | 2SA1201 |
SeCoS |
PNP Silicon Transistor |
|
| 9 | 2SA1201 |
Kexin |
Transistors |
|
| 10 | 2SA1201 |
TRANSYS |
Plastic-Encapsulate Transistors |
|
| 11 | 2SA1201-O |
MCC |
PNP Silicon Power Transistors |
|
| 12 | 2SA1201-Y |
MCC |
PNP Silicon Power Transistors |
|