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2SA1203 |
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| Part Number | 2SA1203 |
| Manufacturer | GME |
| Description | Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary t... |
| Features |
z Suitable for output stage of 3 watts amplifier
Pb
Lead-free
z Suitable flat package
z PC=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2883
Production specification
2SA1203
ORDERING INFORMATION
Type No.
Marking
2SA1203
HO1/HY1
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC IB PC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0.... |
| Document |
 2SA1203 Data Sheet
PDF 161.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|