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2SA1203 |
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| Part Number | 2SA1203 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884 2SA1203 (PN... |
| Features |
• Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884 2SA1203 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -30 VEBO -5 IC -1500 PC 500 1000 (note) TJ 150 Tstg -55to +150 Unit V V V mA mW 1. BASE 2. COLLECTO 3. EMITTER SOT-89 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Sym... |
| Document |
 2SA1203 Data Sheet
PDF 177.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|