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2SA1203 |
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| Part Number | 2SA1203 |
| Manufacturer | TRANSYS |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SA1203 FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Col... |
| Features |
Power dissipation PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3
TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(B... |
| Document |
 2SA1203 Data Sheet
PDF 118.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|