2SA1200 - Toshiba Semiconductor

2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Un.

Features

ge Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = −150 V, IE = 0 VEB = −5 V, IC = 0 hFE (Note 2) VCE = −5 V, IC = −10 mA VCE (sat) IC = −10 mA, IB = −1 mA VBE VCE = −5 V, IC = −30 mA fT VCE = −30 V, IC = −10 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification BO 2SA1200 Min Typ. Max Unit ― ― −0.1 µA ― ― −0.1 µA 70 ― 240 ― ― −0.8 V ― ― −0.9 V ― 120 ― MHz ― 4.0 5.0 pF 2 2002-08-19 Collector current IC (mA) −50 −40 −30 −20 −10 0 0 IC
  – VCE −2 mA C.