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2SA1203 |
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| Part Number | 2SA1203 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 2SA1203 Audio Frequency Amplifier Applications · Suitable for output stage of 3 watts amplifier · Small flat package · PC = 1.0 t... |
| Features |
itter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −30 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
V (BR) EBO IE = −1 mA, IC = 0
hFE (Note 2)
VCE = −2 V, IC = −500 mA
VCE (sat) VBE fT Cob
IC = −1.5 A, IB = −0.03 A VCE = −2 V, IC = −500 mA VCE = −2 V, IC = −500 mA VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 100 to 200, Y: 160 to 320
Marking
HO
Type name hFE classification
2SA1203
Min Typ. Max Unit
― ― −0.1 µA
― ― −0.1 µA
−30 ― ―
V
−5 ― ―
V
100 ― 320
―
― −2.0
V
―
― −1.0
... |
| Document |
 2SA1203 Data Sheet
PDF 95.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SA1200 |
Kexin |
PNP Transistors |
|
| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
|
| 5 | 2SA1201 |
WILLAS |
Plastic-Encapsulate Transistors |
|