2SA1186 - Inchange Semiconductor

2SA1186 POWER TRANSISTOR

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 .

Features

ollector-Emitter Voltage Breakdown IC= -25mA ; IB= 0 Saturation IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -80V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time  hFE Classifications O P Y IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V 50-80 80-130 130-180 MIN TYP. MAX UNI T -150 V -2.0 V -100 μA -100 μA 50 180 110 pF 60 MHz 0.25 μs .