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2SA1182 - Toshiba Semiconductor

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2SA1182 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1182 Unit: mm  AEC-Q101 Qualified (Note1).  Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA  Complementary to 2SC2859. Note1: For detail information, p.

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e/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devic.

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