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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS FEATURES : . Complementary to 2SC2824. . Suitable for driver of 60 to 80 watts. . High breakdown voltage. Unit in mm 7. 9 MAX. -| 03.1±O.15 MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Volt.
: . Complementary to 2SC2824. . Suitable for driver of 60 to 80 watts. . High breakdown voltage. Unit in mm 7. 9 MAX. -| 03.1±O.15 MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Storage Temperature Range stg RATING -120 -120 UNIT -1 -100 mA 15 150 -55-150 °C CO 2.3 u 2.3 2 "S IX "- 1 N 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO— 186 TOSHIBA 2-8F1A Mounting Kit No. AC46C.
2SA1184 - SavantIC
·With TO-126 package ·High breakdown voltage APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifi.
2SA1184 - Inchange Semiconductor
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Complement to Type 2SC2824 ·Minimum Lot-to-Lot variati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1180 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1180 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1182 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1182-HF |
Kexin |
PNP Transistors |
|
| 5 | 2SA1185 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SA1185 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 7 | 2SA1186 |
Sanken electric |
Silicon PNP Epitaxial Planar Transistor |
|
| 8 | 2SA1186 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1186 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1187 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SA1187 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 12 | 2SA1188 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|