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2SA1186 |
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| Part Number | 2SA1186 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
ollector-Emitter Voltage
Breakdown IC= -25mA ; IB= 0 Saturation IC= -5.0A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -150V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -3A ; VCE= -4V
COB
Output Capacitance
IE= 0 ; VCB= -80V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
hFE Classifications O P Y IC= -5A ,RL= 12Ω, IB1= -IB2= -0.5A,VCC= -60V 50-80 80-130 130-180 MIN TYP. MAX UNI T -150 V -2.0 V -100 μA -100 μA 50 180 110 pF 60 MHz 0.25 μs ... |
| Document |
 2SA1186 Data Sheet
PDF 199.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1180 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1180 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1182 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA1182-HF |
Kexin |
PNP Transistors |
|
| 5 | 2SA1184 |
Toshiba |
Silicon PNP Transistor |
|