2SA1188 - Hitachi Semiconductor

2SA1188 Silicon PNP Epitaxial Transistor

2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Colle.

Features

  –0.1
  –0.1 800 Unit V V V µA µA Test conditions I C =
  –10 µA, IE = 0 I C =
  –1 mA, RBE = ∞ I E =
  –10 µA, IC = 0 VCB =
  –70 V, IE = 0 VEB =
  –2 V, IC = 0 VCE =
  –12 V, I C =
  –2 mA
*2 I C =
  –10 mA, I B =
  –1 mA
*2 Min
  –90
  –90
  –5 — — 250 — — — — Typ — — — — — —
  –120 —
  –120 —
  –5 — — 250 — — — — VCE(sat) VBE(sat)
  –0.05
  –0.15 —
  –0.7 130 3.2
  –1.0 — — — — —
  –0.05
  –0.15 V
  –0.7 130 3.2
  –1.0 — — V MHz pF Gain bandwidth product f T Collector output capacitance Cob VCE =
  –6 V, I C =
  –10 mA VCB =
  –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test D 250.