2SA1185 - Inchange Semiconductor

2SA1185 POWER TRANSISTOR

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE ·Large Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXI.

Features

C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE= -5V COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V  hFE-1 Classifications Q P O 60-120 100-200 16.