2SA1184 |
Part Number | 2SA1184 |
Manufacturer | Inchange Semiconductor |
Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Complement to Type 2SC2824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed... |
Features |
R)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -100mA; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -100mA; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
MIN TYP. MAX UNIT
-120
V
-5
V
-1.0
V
-1.0
V
-0.1 μA
-0.1 μA
80
240
120
MHz
30
pF
hFE Classifications O Y 80-160 120-240 NOTICE: ISC reserves the... |
Document |
2SA1184 Data Sheet
PDF 216.48KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1180 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SA1180 |
Inchange Semiconductor |
POWER TRANSISTOR | |
3 | 2SA1182 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1182-HF |
Kexin |
PNP Transistors | |
5 | 2SA1184 |
Toshiba |
Silicon PNP Transistor |