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2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C Thermal Resistance from Junction to Case Operating Junction and.
• High Gain Dalington Performance
• DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
• True Complementary Specifications
• RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx)
Maximum Ratings (TC=25ºC unless noted otherwise)
Symbol
Description
2N6383 2N6648
2N6384 2N6649
VCBO
Collector-Base Voltage
40 60
VCEO
Collector-Emitter Voltage
40
60
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
IC
Collector Current (Peak)
10 15
IB PD
RθJC TJ, TSTG
Base Current
Total Power Dissipation at TC=25°C
Derate .
2N6649 - Microsemi Corporation
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qual.
2N6649 - Central Semiconductor
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 2 | 2N6648 |
INCHANGE |
PNP Transistor |
|
| 3 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 4 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 5 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 6 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 7 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS |
|
| 8 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 9 | 2N6609 |
NTE |
Silicon PNP Transistor |
|
| 10 | 2N6609 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | 2N6620 |
Siemens |
NPN SILICON TRANSISTOR |
|
| 12 | 2N665 |
Motorola |
PNP Transistor |
|