2N6649 |
Part Number | 2N6649 |
Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
Description | TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Coll... |
Features |
6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc
Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω
V(BR)CER
Vdc
Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc
ICBO
mAdc
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2N6648, 2N6649, 2N6650 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc VCE = -60 Vdc VCE = -80 Vdc Collector-Emitter Cutoff Curren... |
Document |
2N6649 Data Sheet
PDF 76.28KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR | |
2 | 2N6648 |
INCHANGE |
PNP Transistor | |
3 | 2N6648 |
TAITRON |
Darlington Power Transistor | |
4 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor | |
5 | 2N6649 |
TAITRON |
Darlington Power Transistor |