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·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = -8A ·Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A ·Complement to Type 2N3773 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters.
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2N6609 - NTE
The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positione.
2N6609 - ON Semiconductor
NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset p.
2N6609 - Central Semiconductor
Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.ce.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N6620 |
Siemens |
NPN SILICON TRANSISTOR |
|
| 4 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 5 | 2N6648 |
INCHANGE |
PNP Transistor |
|
| 6 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 7 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 8 | 2N6649 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 9 | 2N6649 |
TAITRON |
Darlington Power Transistor |
|
| 10 | 2N6649 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 11 | 2N665 |
Motorola |
PNP Transistor |
|
| 12 | 2N6650 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|