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2N6648 - Microsemi Corporation

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2N6648 PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -6.

Features

6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6648, 2N6649, 2N6650 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc VCE = -60 Vdc VCE = -80 Vdc Collector-Emitter Cutoff Curren.

The same part from a different manufacturer

Datasheet 2N6648 - Central Semiconductor 2N6648

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

Datasheet 2N6648 - INCHANGE 2N6648

·With TO-3 packaging ·Built-in base-emitter shunt resistors ·Very high DC current gain ·Complement to type 2N6648 ·Minim.

Datasheet 2N6648 - TAITRON 2N6648

2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitt.

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