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2N6603 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (Ta = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage vCEO 15 Collector-Base Voltage VCBO 25 Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 125°C Derate above 125°C VEBO 'c PD 3.0.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS |
|
| 3 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 4 | 2N6609 |
NTE |
Silicon PNP Transistor |
|
| 5 | 2N6609 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2N6620 |
Siemens |
NPN SILICON TRANSISTOR |
|
| 7 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 8 | 2N6648 |
INCHANGE |
PNP Transistor |
|
| 9 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 10 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 11 | 2N6649 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 12 | 2N6649 |
TAITRON |
Darlington Power Transistor |
|