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2N6649 |
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| Part Number | 2N6649 |
| Manufacturer | TAITRON |
| Description | 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) ... |
| Features |
• High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate ... |
| Document |
 2N6649 Data Sheet
PDF 335.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 2 | 2N6648 |
INCHANGE |
PNP Transistor |
|
| 3 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 4 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 5 | 2N6649 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|