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2N6609 |
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| Part Number | 2N6609 |
| Manufacturer | NTE |
| Description | The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circui... |
| Features |
D High Safe Operating Area 150W @ 100V
D Completely Characterized for Linear Operation
D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector−Base Voltage, VCBO . . . . .... |
| Document |
 2N6609 Data Sheet
PDF 65.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS |
|
| 4 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 5 | 2N6609 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
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